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Ordering number:ENN778F
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1207/2SC2909
High-Voltage Switching AF 60W Predriver Applications
Features
* Adoption of FBET process. * High breakdown voltage. * Excellent linearity of hFE and small Cob. * Fast switching speed.
Package Dimensions
unit:mm 2003B
[2SA1207/2SC2909]
5.0 4.0 4.0
0.45 0.5 0.6 2.0 0.45 0.44 14.0 1 2 3
5.0
( ) : 2SA1207
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions
1.3
1.3
1 : Emitter 2 : Collector 3 : Base SANYO : NP
Ratings (-)180 (-)160 (-)5 (-)70 (-)140 600 150 -55 to +150
Unit V V V mA mA mW
C C
Electrical Characteristics at Ta = 25C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Symbol ICBO IEBO hFE fT Cob VCE(sat) VCB=(-)80V, IE=0 VEB=(-)4V, IC=0 VCE=(-)5V, IC=(-)10mA VCE=(-)10V, IC=(-)10mA VCB=(-)10V, f=1MHz IC=(-)30mA, IB=(-)3mA 100* 150 (2.5)2.0 0.08 (-0.14) 0.3 (-0.4) Conditions Ratings min typ max (-)0.1 (-)0.1 400* MHz pF V Unit A A
* : The 2SA1207/2SC2909 are classified by 10mA hFE as follows :
Rank hFE R 100 to 200 S 140 to 280 T 200 to 400
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70502TN (KT)/71598HA (KT)/4190MO/3187AT/2255MY, TS No.778-1/4
2SA1207/2SC2909
Continued from preceding page.
Parameter Turn-ON Time Fall Time Storage Time Symbol ton tf tstg Conditions See specified Test Circuit See specified Test Circuit See specified Test Circuit Ratings min typ 0.1 0.2 1.0 max Unit s s s
Switching Time Test Circuit
IN 3k IB1 IB2 50 5k + 1F --2V + 1F 20V OUT
2k
IC=10IB1=--10IB2=10mA (For PNP, the polarity is reversed.)
--60
IC -- VCE
2SA1207
. --0 3 mA
60
IC -- VCE
2SC2909
A 5m 0.2 A 0.2m
Collector Current, IC - mA
--0
--40
--0.2m
--30
A
40
0.3
30
m .25
Collector Current, IC - mA
A
mA
--50
50
--0.15mA
0.15mA
0.1mA
--20
--0.1mA
20
--10
--0.05mA
10
0.05mA
0 0
IB=0
--10 --20 --30 --40 --50 --60 ITR02989
IB=0
0 0 10 20 30 40 50 60 ITR02990
Collector-to-Emitter Voltage, VCE - V
--80 --70
Collector-to-Emitter Voltage, VCE - V
80
IC -- VBE
2SA1207 VCE=--5V
Collector Current, IC - mA
IC -- VBE
2SC2909 VCE=5V
70 60 50 40 30 20 10 0 0
Collector Current, IC - mA
--60 --50 --40 --30 --20 --10 0 0
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Base-to-Emitter Voltage, VBE - V ITR02991
Ta=7 5
--25C
0.2
0.4
0.6
Ta=75 C
25C --25C
0.8
C 25C
1.0
1.2 ITR02992
Base-to-Emitter Voltage, VBE - V
No.778-2/4
2SA1207/2SC2909
1000 7 5 3 2
hFE -- IC
2SA1207 VCE=--5V
Ta=75C
5 3 2
hFE -- IC
Ta=75C
25C
2SC2909 VCE=5V
25C
DC Current Gain, hFE
DC Current Gain, hFE
--25C
7 5 3 2
--25C
7 5 3 2
100
100
10
5
7
--1.0
2
3
5
7
Collector Current, IC - mA
--10
2
3
5
7 --100 ITR02993
10
5
7
1.0
2
3
5
7
Collector Current, IC - mA
10
2
3
5
7 100 ITR02994
5
fT -- IC
Gain-Bandwidth Product, fT - MHz
2SA1207 VCE=--10V
5 3 2
fT -- IC
2SC2909 VCE=10V
Gain-Bandwidth Product, fT - MHz
3 2
100 7 5 3 2
100 7 5 3 2
10
5
7 --1.0
2
3
5
7
Collector Current, IC - mA
--10
2
3
5
7 --100 ITR02995
10
5
7
1.0
2
3
5
7
Collector Current, IC - mA
10
2
3
5
7 100 ITR02996
10 7
Cob -- VCB
2SA1207 f=1MHz
10 7
Cob -- VCB
2SC2909 f=1MHz
Output Capacitance, Cob - pF
5
Output Capacitance, Cob - pF
2 3 5 7 2 3 5 7
5
3
3
2
2
1.0 7 5
1.0 7 5
--10
Collector-to-Base Voltage, VCB -- V
5
--100 ITR02997 1000 7
2
3
5
7
10
2
3
5
Collector-to-Base Voltage, VCB -- V
7 100 ITR02998
VCE(sat) -- IC
2SA1207 IC / IB=10
VCE(sat) -- IC
2SC2909 IC / IB=10
Collector-to-Emitter Saturation Voltage, VCE (sat) - mV
Collector-to-Emitter Saturation Voltage, VCE (sat) - mV
3 2
5 3 2
--1000 7 5 3 2
100 7 5 3 2 5 7 2 3
25C
25C
--100 7 5 3 5 7 --1.0
Ta=75C
Ta=75C
--25C
--25C
2 3 5 7 --10 2 3 5
Collector Current, IC - mA
7 --100 ITR02999
1.0
5
7
10
2
3
5
Collector Current, IC - mA
7 100 ITR03000
No.778-3/4
2SA1207/2SC2909
--10 7
VBE(sat) -- IC
2SA1207 IC / IB=10
10 7
VBE(sat) -- IC
2SC2909 IC / IB=10
Base-to-Emitter Saturation Voltage, VBE (sat) - V
5 3 2
Base-to-Emitter Saturation Voltage, VBE (sat) - V
5
3 2
25C
--1.0 7 5 3 2
Ta=--25C
25C
1.0 7 5
75C
Ta=--25C
75C
5
7 --1.0
2
3
5
7 --10
2
3
5
Collector Current, IC - mA
7 --100 ITR03001
3
5
7
1.0
2
3
5
7
10
2
3
5
Collector Current, IC - mA
700
7 100 ITR03002
ASO
3 2
PC -- Ta
2SA1207 / 2SC2909
2SA1207 / 2SC2909 ICP=140mA IC=70mA
600
100 7 5 3 2
Collector Dissipation, PC - mW
Collector Current, IC - mA
s 1m ms 10 ms 0 10
500
DC
400
Op
era
tio
n
300
10 7 5 3 2 5
200
Single pulse Ta=25C (For PNP, minus sign is omitted.)
7 10 2 3 5 7 100 2 ITR03003
100
0
0
20
40
60
80
100
120
140
160
Collector-to-Emitter Voltage, VCE - V
Ambient Temperature, Ta - C
ITR03004
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of July, 2002. Specifications and information herein are subject to change without notice.
PS No.778-4/4

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